Published July 1, 2002
| Version v1
Journal article
Epitaxial growth of CuGaS2 on Si(111)
Creators
- 1. Institut fuer Optik und Quantenelektronik, Universitaet Jena, 07743 Jena (Germany)
- 2. Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany)
- 3. Institut fuer Festkoerperphysik, Universitaet Jena, 07743 Jena (Germany)
Description
We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray diffraction data prove the epitaxial growth of the CuGaS2 films in the highly ordered chalcopyrite structure. Using photoluminescence, we are able to detect strong excitonic emissions up to room temperature, while photocurrent spectra reveal the A, B, and C valence-to-conduction-band transitions as they are typical for the tetragonal chalcopyrite structure
Additional details
Identifiers
- DOI
- 10.1063/1.1492003;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 1
- Journal Page Range
- p. 156-158
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35011256
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHALCOPYRITE; COPPER SULFIDES; CRYSTAL STRUCTURE; EXCITONS; GALLIUM SULFIDES; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; VALENCE; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MINERALS; PHOTON EMISSION; PHYSICAL PROPERTIES; QUASI PARTICLES; SCATTERING; SEMIMETALS; SULFIDE MINERALS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.