Diffusion of native defects in (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ during liquid phase epitaxy

A quantitative theoretical model for the diffusion of native defects in (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ is suggested. The model is based on the following main assumption: two types of native defects (donor-like and acceptor-like) are present in (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ at the same time. The charge carrier concentration is calculated from the difference between the concentrations of the two types of defects. The energy parameters of native donor- and acceptor-like defects are estimated. Experimental investigations of the charge carrier distribution across LPE-epilayer (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ are made to prove the validity of the theoretical model. The dependences observed are in good agreement with those predicted on the base of the theory. Thus, the theoretical model suggested for the diffusion of native defects in (Pb/sub 1-x/Sn/sub x/)/sub 1-y/Te/sub y/ gives reasonable quantitative explanations of LPE-experimental results. (author)