Mechanism of γ-radiation effect on thermoelectric properties of n-PbTe films

On the base of comparison of regularities of degradation of n-PbTe film parameters under γ-irradiation in the air, vacuum and on annealing the mechanism of γ-quantum effect on the properties of the above films (electric conductivity, thermo-e.m.f. coefficient, Hall mobility) is investigated. The conclusion is drawn, that changing n-PbTe film parameters under γ-irradiation in the air up to 108P integral doses is mostly caused by oxygen implantation into grain boundaries. With higher doses changing in volume properties occurs. The annealing of films irradiated with the 5x106P dose reduces film parameters. With integral doses higher than 108P film parameter changes are irreversible