Published 2010
| Version v1
Miscellaneous
High field electric transport and far infrared emission caused by electrons in the InxGa1-xAs/GAAS double tunnel-coupled quantum wells
Creators
- 1. Institute of Physics, Kyiv (Ukraine)
- 2. R and D Phys-Tech Institute at the N. Novgorod University, N.Novgorod (Russian Federation)
- 3. Institute for Microstructure Physics, N.Novgorod (Russian Federation)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Naukovij Svyit
- Imprint Place
- Kyiv (Ukraine)
- Imprint Title
- Materials of 8 International Conference on Electronic Processes in Organic Materials. Abstracts
- Imprint Pagination
- 192 p.
- Journal Page Range
- p. 30-31
- Report number
- INIS-UA--170
Conference
- Title
- 8. International Conference on Electronic Processes in Organic and Inorganic Materials
- Dates
- 17-22 May 2010
- Place
- Ivano-Frankivsk (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 43050964
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CHARGE CARRIERS; DEPLETION LAYER; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON EMISSION; ENERGY GAP; GALLIUM ARSENIDES; HEATING; HETEROJUNCTIONS; INDIUM ARSENIDES; QUANTUM WELLS; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS