Published June 1, 2012
| Version v1
Journal article
H-plasma-assisted aluminum induced crystallization of amorphous silicon
- 1. Institute of Photo-Electronics, Nankai University, Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071 (China)
- 2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Description
A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·s). The possible mechanism of AIC assisted by hydrogen radicals is also discussed. (semiconductor technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/33/6/066003Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 33
- Journal Issue
- 6
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43107921
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ANNEALING; CRYSTALLIZATION; HYDROGEN; IONS; MASS SPECTROSCOPY; PLASMA; RADICALS; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; FILMS; HEAT TREATMENTS; LASER SPECTROSCOPY; MATERIALS; METALS; NONMETALS; PHASE TRANSFORMATIONS; SEMIMETALS; SPECTROSCOPY