Published July 2010 | Version v1
Journal article

Magnetic Properties and Magnetoresistance of CdMnS: Au Based Structures Prepared by Co-evaporation

  • 1. Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 (China)
  • 2. Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3–26 Seoul 100–715 (Korea, Republic of)

Description

Polycrystalline CdMnS and CdMnS: Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively Under optimized growth conditions, CdMnS: Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at. % are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS: Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77 K. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/7/078501

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
7
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU