Ellipsometry study of optical parameters of AgIn5S8 crystals
Creators
- 1. Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara (Turkey)
- 2. Virtual International Scientific Research Centre, Baku State University, 1148 Baku (Azerbaijan)
- 3. Department of Physics, Middle East Technical University, 06800 Ankara (Turkey)
Description
AgIn5S8 crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometry experiments carried out in the 1.2–6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscillator energy, dispersion energy and zero-frequency refractive index, high-frequency dielectric constant values were found from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. Crystal structure and atomic composition ratio of the constituent elements in the AgIn5S8 crystal were revealed from structural characterization techniques of X-ray diffraction and energy dispersive spectroscopy.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2015.09.016Additional details
Identifiers
- DOI
- 10.1016/j.physb.2015.09.016;
- PII
- S0921-4526(15)30230-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 478
- Journal Page Range
- p. 127-130
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48011833
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; BRIDGMAN METHOD; CRYSTAL MODELS; CRYSTAL STRUCTURE; CRYSTALS; DIELECTRIC MATERIALS; ELLIPSOMETRY; EV RANGE 01-10; OSCILLATORS; PERMITTIVITY; PHOTONS; REFLECTIVITY; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- BOSONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ENERGY RANGE; EQUIPMENT; EV RANGE; IONIZING RADIATIONS; MASSLESS PARTICLES; MATERIALS; MATHEMATICAL MODELS; MEASURING METHODS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SORPTION; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.