Evaluation of SIMS depth resolution using delta-doped multilayers and mixing-roughness-information depth model

Boron delta-doped multilayers are potential reference materials for the evaluation of depth resolution in secondary ion mass spectrometry (SIMS). In this work, we studied extraction of depth resolution parameters using a theoretical model, mixing-roughness-information (MRI) depth model from the measured profiles under various O2+ bombardment conditions. Specimens used were boron delta-doped multilayers in Si (period: 3-20 nm) which had been made by magnetron-sputtering deposition. For SIMS, information depth can be regarded to be very small, so we used only the two parameters concerning mixing and roughness. Measured B profiles were fitted well to the MRI model. The depth resolution parameters could be extracted even from a profile of multilayers with a short periodicity. The combination of short-period multilayers and MRI model analysis would be useful for evaluation of depth resolution in shallow depth profiling