Published April 1, 2007
| Version v1
Journal article
Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass
Creators
- 1. IBM Thomas J Watson Research Center, P.O. Box 218, Yorktown Height, New York 10598 (United States)
- 2. IBM Microelectronics, 2070 Route 52, Hopewell Junction, New York 12533 (United States)
- 3. Department of Biomedical Engineering, Cornell University, Ithaca, New York 14853 (United States)
Description
We have developed a reactive ion etch (RIE) process in borophosphosilicate glass (BPSG) for 150 nm line-and-space features, where line-edge roughness (LER) complemented with RIE lag becomes a major issue. Effect of flow rates and carbon-to-fluorine atomic ratio of fluorohydrocarbon gases was utilized to achieve acceptable process window allowing lower radio frequency powers therefore obtaining acceptable LER and RIE lag in the high-resolution features etched into BPSG
Additional details
Identifiers
- DOI
- 10.1063/1.2717141;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 101
- Journal Issue
- 7
- Journal Page Range
- p. 076102-076102.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39011560
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BOROSILICATE GLASS; CARBON; ETCHING; FLOW RATE; FLUORINE; RADIOWAVE RADIATION; ROUGHNESS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; GLASS; HALOGENS; NONMETALS; RADIATIONS; SURFACE FINISHING; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2007 American Institute of Physics