Published 1998 | Version v1
Miscellaneous

Novel approach to simulation of group-III growth by MOVPE

  • 1. Advanced Technology Center, St. Petersburg (Russian Federation)
  • 2. Lehrstuhl fuer Stroemungsmechanik, University of Erlangen-Nuernberg, Nuernberg (Germany)
  • 3. Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Additional titles

Augmented title (English)
Thin films

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 69

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064579
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CHEMICAL COMPOSITION; COMPUTERIZED SIMULATION; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; MEETINGS; NITRIDES; ORGANOMETALLIC COMPOUNDS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; VAPOR PHASE EPITAXY
Descriptors DEC
CRYSTAL GROWTH METHODS; EPITAXY; FILMS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PNICTIDES; SIMULATION

Optional Information