Carbon doped InAlAs/InGaAs/InAs heterostructures

InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Lande g-factor (around 15 in InAs) and large Rashba effect. Here we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. Two different types of structure, one with the doping layer in growth direction above the InGaAs/InAs conducting channel (normal structure) and one with the doping layer below the conducting channel (inverted structure) were investigated. As expected, magnetotransport experiments with these samples show no magnetic effects as a similar Mn doped structures but a direction dependent longitudinal resistance. In addition the influence of the thickness of the embedded InAs channel and the influence of the In content on carrier density and on longitudinal resistance were investigated.