Published March 1991 | Version v1
Journal article Metadata-only

Optical, photoelectrical and electrooptical properties of Bi12SiO20 single crystals doped with Cd and Ho

Creators

  • 1. AN SSSR, Moscow (Russian Federation). Inst. Obshchej i Neorganicheskoj Khimii

Description

Photoconductive, optical, and electrooptical properties of Czochralski grown Bi12SiO20·(BSO) single crystals with different degree of doping with Cd and Mo are studied. It is found that with the increase of degree of Cd and Mo doping the photosensitivity is quenched almost by five orders of magnitude and crystals are bleached with their electrooptical properties retained. The value of electrooptical module and electrooptical efficiency of the doped samples at λ=543 μm are equal to r41=(4.3±0.3)·10-12 m/V, r41n03=(7.7±0.6)10-11 m/V respectively

Additional details

Additional titles

Original title (Russian)
Оптические, фотоэлектрические и электрооптические свойства монокристаллов Би

Publishing Information

Journal Title
Vysokochistye Veshchestva
Journal Issue
no.2
Series
Vysokochist. Veshchestva.
ISSN
0235-0122
CODEN
VYVEE

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
23082659
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BISMUTH COMPOUNDS; CADMIUM COMPOUNDS; DAMPING; ELECTRO-OPTICAL EFFECTS; MOLYBDENUM COMPOUNDS; MONOCRYSTALS; OPTICAL PROPERTIES; PHOTOSENSITIVITY; QUANTITY RATIO; SILICATES
Descriptors DEC
CRYSTALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SENSITIVITY; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS