Published March 2017
| Version v1
Journal article
Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation
Creators
- 1. NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow (Russian Federation)
- 2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district (Russian Federation)
- 3. RITVERC GmbH, 10, Kurchatov St., 194223 St. Petersburg (Russian Federation)
- 4. JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow (Russian Federation)
Description
In the paper a manufacturing process of three-dimensional (3D) microchannel structure by silicon (Si) anodic etching was discussed. The possibility of microchannels formation allows to increase the active area more than 100 times. In this structure the p-n junction on the whole Si surface was formed. The obtained data allowed to evaluate the characteristics of the betavoltaic converter with a 3D structure by using isotope 63Ni with a specific activity of 10 Ci/g. - Highlights: • The microchannels formation possibility increases the active area more than 100 times. • p-n junction on Si surface was formed.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apradiso.2016.12.019Additional details
Identifiers
- DOI
- 10.1016/j.apradiso.2016.12.019;
- PII
- S0969-8043(16)30668-6;
Publishing Information
- Journal Title
- Applied Radiation and Isotopes
- Journal Volume
- 121
- Journal Page Range
- p. 71-75
- ISSN
- 0969-8043
- CODEN
- ARISEF
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48089612
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BETAVOLTAIC CELLS; ETCHING; EVALUATION; MANUFACTURING; NICKEL 63; P-N JUNCTIONS; SILICON; SURFACES; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; DIRECT COLLECTION CONVERTERS; DIRECT ENERGY CONVERTERS; ELEMENTS; EVEN-ODD NUCLEI; INTERMEDIATE MASS NUCLEI; ISOTOPES; NICKEL ISOTOPES; NUCLEI; RADIOISOTOPES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE FINISHING; YEARS LIVING RADIOISOTOPES
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.