Published March 2017 | Version v1
Journal article

Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

  • 1. NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow (Russian Federation)
  • 2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district (Russian Federation)
  • 3. RITVERC GmbH, 10, Kurchatov St., 194223 St. Petersburg (Russian Federation)
  • 4. JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow (Russian Federation)

Description

In the paper a manufacturing process of three-dimensional (3D) microchannel structure by silicon (Si) anodic etching was discussed. The possibility of microchannels formation allows to increase the active area more than 100 times. In this structure the p-n junction on the whole Si surface was formed. The obtained data allowed to evaluate the characteristics of the betavoltaic converter with a 3D structure by using isotope 63Ni with a specific activity of 10 Ci/g. - Highlights: • The microchannels formation possibility increases the active area more than 100 times. • p-n junction on Si surface was formed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apradiso.2016.12.019

Additional details

Identifiers

DOI
10.1016/j.apradiso.2016.12.019;
PII
S0969-8043(16)30668-6;

Publishing Information

Journal Title
Applied Radiation and Isotopes
Journal Volume
121
Journal Page Range
p. 71-75
ISSN
0969-8043
CODEN
ARISEF

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.