Published November 2019 | Version v1
Journal article Metadata-only

Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon

Creators

  • 1. Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  • 2. The Electron Microscopy Center, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

Description

Small-angle grain boundary (SAGB) growth in multicrystalline Si was observed in situ during directional solidification, and the misorientation and boundary structure were analyzed by electron backscatter diffraction and high-resolution transmission electron microscopy. It was found that SAGBs change their orientation in order to reduce the number of grain boundary dislocations and thus the energy. This suggests that grain boundary dislocations have an influence on SAGB behavior during solidification.

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2019.07.018;
PII
S1359646219304269;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
172
Journal Page Range
p. 105-109
ISSN
1359-6462
CODEN
SCMAF7

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55043159
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DIFFRACTION; DISLOCATIONS; ELECTRONS; GRAIN BOUNDARIES; SILICON; SOLIDIFICATION; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; LINE DEFECTS; MICROSCOPY; MICROSTRUCTURE; PHASE TRANSFORMATIONS; SCATTERING; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.