Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer
Creators
- 1. Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715 (Korea, Republic of)
- 2. Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
- 4. Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)
- 5. Department of Applied Physics, Dankook University, Seoul 140-714 (Korea, Republic of)
- 6. Department of Semiconductor Information Technology, Woosuk University, Wanju 565-701 (Korea, Republic of)
Description
p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.10.026;
- PII
- S0040-6090(05)01942-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 505
- Journal Issue
- 1-2
- Journal Page Range
- p. 129-132
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International conference on materials for advanced technologies - Symposium D: Magnetic nanomaterials and devices
- Acronym
- ICMAT 2005
- Dates
- 3-8 Jul 2005
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38004588
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; EV RANGE 01-10; HEAT TREATMENTS; HYSTERESIS; INDIUM PHOSPHIDES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE PHOSPHIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELEMENTS; EMISSION; ENERGY RANGE; EPITAXY; EV RANGE; FILMS; INDIUM COMPOUNDS; LUMINESCENCE; MANGANESE COMPOUNDS; MATERIALS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR MATERIALS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.