Published 2010
| Version v1
Miscellaneous
Kinetics of formation of adsorption layer on the edge of (100) GaAs while nucleation of InAs quantum dots in the process of chloride epitaxy
Creators
- 1. National University 'Lvyivs'ka polyitekhnyika', Lviv (Ukraine)
Description
no abstract available
Additional details
Additional titles
- Original title (Ukrainian)
- Kyinetika formuvannya adsorbtsyijnogo sharu na granyi (100) GaAs pyid chas zarodkoutvorennya kvantovikh tochok In As v protsesyi khloridnoyi epyitaksyiyi
Publishing Information
- Imprint Place
- Kremenchuk (Ukraine)
- ISBN
- 978-966-8931-70-3
- Imprint Title
- 4. International Scientific-practical conference on materials of electronic techniques and modern informational technologies (METIT-4). Abstracts
- Imprint Pagination
- 248 p.
- Journal Page Range
- p. 150-151
- Report number
- INIS-UA--166
Conference
- Title
- 4. International scientific-practical conference
- Original Conference Title
- 4. Mezhdunarodna naukovo-praktichna konferentsyiya
- Dates
- 19-21 May 2010
- Place
- Kremenchuk (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 42100312
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ADSORPTION; ARSENIC CHLORIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; NANOSTRUCTURES; NUCLEATION; QUANTUM DOTS; REACTION KINETICS; VAPOR PHASE EPITAXY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; INDIUM COMPOUNDS; KINETICS; NANOSTRUCTURES; PNICTIDES; SORPTION