Optical characterization and microstructure of BaTiO3 thin films obtained by RF-magnetron sputtering
- 1. 'Politehnica' University of Bucharest, Department of Oxide Materials Science and Engineering, 1-7 Gh. Polizu, P.O. Box 12-134, 011061 Bucharest (Romania)
- 2. Institute of Physical Chemistry 'I.G. Murgulescu' of the Romanian Academy of Sciences, 202 Splaiul Independentei, 77208 Bucharest (Romania)
- 3. 'Paul Sabatier' University, Department of Electrical Engineering (LGET-UMR 5003 CNRS), 118 Route de Narbonne, 31062 Toulouse (France)
- 4. National Institute of Microtechnologies, 32B Erou Iancu Nicolae, P.O. Box 38-160, 72225 Bucharest (Romania)
- 5. Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)
Description
BaTiO3 thin films were deposited on Pt/Ti/SiO2/Si by rf planar-magnetron sputtering. The films thickness increases with the decrease of both deposition pressure and sample-discharge centre distance. The films annealed at 900 deg. C, for 8 h, present direct band gap energy ranged between 3.57 and 3.59 eV. The dependence of the structure and microstructure (texture, degree of crystallinity), as well as of the optical characteristics on the deposition parameters, was analysed. Using spectroscopic ellipsometry (SE) measurements coupled with the Bruggeman Effective Medium Approximation (B-EMA), the layer structure and the surface roughness, were determined. The root mean square roughness values of the surface layer, estimated by atomic force microscopy (AFM) analyses, are ranged between 10 and 20 nm and were in good agreement with SE data. The obtained films have tetragonal unit cell and show densely packed, non-columnar morphology and hexagon-like crystallite shape
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2006.06.008;
- PII
- S0169-4332(06)00840-3;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 1
- Journal Page Range
- p. 344-348
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- Symposium P, Current trends in optical and X-ray metrology of advanced materials for nanoscale devices
- Acronym
- E-MRS 2005 spring meeting
- Dates
- 31 May - 3 Jun 2005
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38106081
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELLIPSOMETRY; EV RANGE 01-10; LAYERS; MAGNETRONS; MICROSTRUCTURE; MORPHOLOGY; OPTICAL PROPERTIES; SILICON OXIDES; SPUTTERING; SURFACES; THIN FILMS; TITANATES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ENERGY RANGE; EQUIPMENT; EV RANGE; FILMS; HEAT TREATMENTS; MEASURING METHODS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.