Electronic spin polarization and the spin-dependent bandstructure in GaAs probed by optically pumped NMR

High resolution optically pumped NMR (OPNMR) experiments are used to resolve fine features in the spin-dependent electronic structure of the valence bands in semi-insulating GaAs. By theoretically calculating oscillations in the OPNMR signal intensity with respect to the excitation energy, we have mapped out the conduction band electronic spin polarization under optical pumping. Comparison with a theoretical analysis of the oscillatory experimental features allows the extraction of semiconductor energy band parameters