Effect of supercooling on the microstructural development and optimization of physical properties of melt grown SnSe crystals
- 1. CHRIST (Deemed to be University), Department of Physics and Electronics (India)
- 2. Indian Institute of Science (IISc), Centre for Nano Science and Engineering (CeNSE) (India)
Description
The microstructural development of stoichiometric tin monoselenide (SnSe) crystals grown by vertical Bridgman–Stockbarger method using an indigenously fabricated furnace has been investigated under high vacuum (~ 10−6 mbar). The ampoule translation rate (tr) and supercooling, ΔT (= Tm − T, where Tm is the melting point and T is the crystallization temperature) were varied in the range, 12–2 mm/h and 20–100 °C respectively. Enhancement of ΔT and tr led to constitutional supercooling, inducing compositional changes and non-stoichiometry. Low ΔT (20–40 °C) and high tr (12–10 mm/h) resulted in globules, flakes and cavities. When ΔT = 60 °C and tr = 9 to 7 mm/h, mounds were formed with closed contours and ripples, due to atomically rough liquid–solid (l-β) interface. Fine tuning of ΔT (60 °C) and tr (2 mm/h) enabled smooth planar interface, so as to yield good quality crystalline structures with periodic atomic deposition promoting crystal growth, layer-by-layer. Energy dispersive analysis by X-rays and powder X-ray diffraction studies revealed appreciable crystallinity, chemical homogeneity and phase purity. The density of crystals estimated from crystallographic data (6.183 g/cm3) corroborates with that obtained utilizing Archimedes principle. Thermogravimetric and microindentation analyses established thermal and mechanical stability. The low etch pit density (~ 102 cm−2) manifests nearly perfect growth of crystals than their melt counterparts. UV–Vis–NIR and PL spectra reflected direct transition with an energy gap of 1.32 eV, validating immense potential of the grown crystals for photovoltaic applications.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 15
- Journal Page Range
- p. 14300-14311
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52024272
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; CRYSTALLIZATION; ENERGY GAP; MELTING POINTS; MICROSTRUCTURE; PHOTOVOLTAIC EFFECT; SOLAR CELLS; SUPERCOOLING; THERMAL GRAVIMETRIC ANALYSIS; TIN SELENIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL ANALYSIS; COHERENT SCATTERING; COOLING; DIFFRACTION; DIRECT ENERGY CONVERTERS; EQUIPMENT; GRAVIMETRIC ANALYSIS; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; QUANTITATIVE CHEMICAL ANALYSIS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SOLAR EQUIPMENT; THERMAL ANALYSIS; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSITION TEMPERATURE
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature