Published January 15, 1983 | Version v1
Journal article

Radiation effects on modulation-doped GaAs-Al/sub x/Ga/sub 1-x/As heterostructures

  • 1. Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544

Description

The effects of 35-KeV electron beam and 60Co gamma radiation on modulation-doped GaAs-Al/sub x/Ga/sub 1-x/As heterostructures were studied by measuring the transport and the quantum transport of and the field effect on, the two-dimensional (2D) electrons in GaAs at the heterojunction interface. While the γ radiation in doses up to 1.3 x 106 rad causes no appreciable changes in the 2D transport properties, the electron beam irradiation reduces the electron mobility. This reduction in electron mobility is approx.50% for electron doses of 10-10 C/μm2

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
42
Journal Issue
2
Series
Appl. Phys. Lett.
Journal Page Range
180-182
ISSN
0003-6951