Published October 7, 2003
| Version v1
Journal article
Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction
Creators
- 1. Physics Department and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
- 2. Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 (China)
Description
The FeCo/AlOx/Co magnetic tunnel junction was fabricated using a two-step plasma oxidation technique. The tunnelling magneto-resistance ratio of the junction as-deposited was about 8.5%, and reached 14.0% after annealing at 200 deg C. Transmission electron microscopy, high-resolution electron microscopy and electron holography were used to study the microstructure of the junction. The enhancement of the magneto-resistance effect after annealing could be attributed to the uniformity of the barrier layer, the improvement of FM/I interfaces, and the deoxidization of the bottom ferromagnetic electrode
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/36/2313/d3_19_001.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/36/2313/d3_19_001.pdf; http://www.iop.org/;
- DOI
- 10.1088/0022-3727/36/19/001;
- PII
- S0022-3727(03)64359-7;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 36
- Journal Issue
- 19
- Journal Page Range
- p. 2313-2316
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35028686
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; ANNEALING; COBALT COMPOUNDS; FERROMAGNETIC MATERIALS; IRON COMPOUNDS; MAGNETORESISTANCE; MICROSTRUCTURE; OXIDATION; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MAGNETIC MATERIALS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS