Published October 7, 2003 | Version v1
Journal article

Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction

  • 1. Physics Department and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  • 2. Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 (China)

Description

The FeCo/AlOx/Co magnetic tunnel junction was fabricated using a two-step plasma oxidation technique. The tunnelling magneto-resistance ratio of the junction as-deposited was about 8.5%, and reached 14.0% after annealing at 200 deg C. Transmission electron microscopy, high-resolution electron microscopy and electron holography were used to study the microstructure of the junction. The enhancement of the magneto-resistance effect after annealing could be attributed to the uniformity of the barrier layer, the improvement of FM/I interfaces, and the deoxidization of the bottom ferromagnetic electrode

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/36/2313/d3_19_001.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
36
Journal Issue
19
Journal Page Range
p. 2313-2316
ISSN
0022-3727
CODEN
JPAPBE