Published March 1, 1993 | Version v1
Journal article

Magnetic relaxation and intrinsic pinning in a single crystal of Bi2Sr2CaCu2Ox

  • 1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  • 2. Instituto de Fisica, Caixa Postale 6165, Universidade Estadual de Campinas 13081-Campinas, Sao Paulo (Brazil)
  • 3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

Description

Magnetic-relaxation experiments were performed on Bi2Sr2CaCu2Ox single crystals with the direction of the field parallel to the ab plane. Based on the relaxation data, we have obtained relationships between the activation energy U and the current density j by an approach we developed previously. We found that the activation energy has a logarithmic dependence on j in a wide regime of driving force. It has been reported that CuO2 planes in high-Tc superconductors can act as strong intrinsic pinning centers and that the relation U∼U0ln(jc/j) may describe such a pinning mechanism. Our experimental results have shown good agreement with such a physical model of intrinsic flux pinning

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
47
Journal Issue
9
Journal Page Range
p. 5414-5418.
ISSN
0163-1829
CODEN
PRBMDO