Published 2018 | Version v1
Miscellaneous

CsK2Sb photocathode experiment on P-type and N-type semiconductor substrates

  • 1. Institute for Molecular Science, UVSOR Facility, Okazaki, Aichi (Japan)

Description

CsK2Sb photo-cathode is capable to generate a high intensity and low emittance electron beam with a visible laser light. This is feasible for accelerator project especially requiring a high brightness electron beam. In this study, we performed cathode evaporation on N-type Si(100), N-type Si(111), P-type Si(100) and P-type Si(111) substrates to evaluate the performance dependence on the semiconductor substrate types. We report evaporation experiment of CsK2Sb on the different types semiconductor substrates. (author)

Part of:
Proceedings of the 15th annual meeting of Particle Accelerator Society of Japan

Additional details

Additional titles

Original title (Japanese)
P型及びN型半導体基板上でのCsK2Sb光陰極生成実験

Publishing Information

Imprint Title
Proceedings of the 15th annual meeting of Particle Accelerator Society of Japan
Imprint Pagination
[1380 p.]
Journal Page Range
p. 744-747

Conference

Title
15. annual meeting of Particle Accelerator Society of Japan
Acronym
PASJ2018
Dates
7-10 Aug 2018
Place
Nagaoka, Niigata (Japan)

Optional Information

Notes
11 refs., 5 figs., 1 tab. Imprint:#7B2C#15#56DE##65E5##672C##52A0##901F##5668##5B66##4F1A##5E74##4F1A#