Published 1991 | Version v1
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CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

Description

Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm3). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

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MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
CEA-CONF--10784

Conference

Title
7. International Workshop on Room Temperature Semiconductor X and Gamma-ray Detectors and Associated Electronics.
Dates
23-28 Sep 1991.
Place
Ravello (Italy).