Published 2009 | Version v1
Miscellaneous

Development of technological formation principles of unstressed slightly defected Chokhral'sky silicon

  • 1. Institute of Semiconductor Physics, Kyiv (Ukraine)

Description

no abstract available

Part of:
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 1. Abstracts

Additional details

Additional titles

Original title (Ukrainian)
Rozrobka tekhnologyichnikh printsipyiv formuvannya nenapruzhenogo malodefektnogo kremnyiya Chokhral's'kogo

Publishing Information

Imprint Place
Zaporyizhzhya (Ukraine)
ISBN
978-966-414-058-1
Imprint Title
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 1. Abstracts
Imprint Pagination
224 p.
Journal Page Range
p. 32-33
Report number
INIS-UA--143

Conference

Title
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 1. Conference dedicated to the 50 anniversary of the Institute of Semiconductor Physics after V.E. Lashkaryov of NASU foundation
Original Conference Title
4. Ukrayins'ka Naukova Konferentsyiya z Fyiziki Napyivprovyidnikyiv (UNKFN-4). Konferentsyiya prisvyachena 50-ryichchyu stvorennya Yinstitutu Fyiziki Napyivprovyidnikyiv yim. V.Je. Lashkaryova NAN Ukrayini
Dates
15-19 Sep 2009
Place
Zaporyizhzhya (Ukraine)

Optional Information

Notes
Imprint:Tezi Dopovyidej IV Ukrayins'koyi Naukovoyi Konferentsyiyi z Fyiziki Napyivprovyidnikyiv (UNKFN-4). Tom 1.