Published 2008
| Version v1
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Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers
- 1. Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)
- 2. Institute of Electron Technology, Warsaw (Poland)
- 3. Frank Laboratory of Neutron Physics, JINR, Dubna (Joint Institute for Nuclear Research (JINR))
- 4. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, Dresden (Georgia)
Description
no abstract available
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40107907.pdf
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Additional details
Publishing Information
- Publisher
- Maria Curie-Sklodowska University, Lublin
- Imprint Place
- Lublin (Poland)
- Imprint Title
- Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)
- Imprint Pagination
- 186 p.
- Journal Page Range
- p. 31
- Report number
- INIS-PL--2009-0011
Conference
- Title
- 7. International Conference on Ion Implantation and other Applications of Ions and Electrons
- Acronym
- ION 2008
- Dates
- 16-19 Jun 2008
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 40107907
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; ELLIPSOMETRY; GERMANIUM; INTERFACES; ION IMPLANTATION; LAYERS; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; HEAT TREATMENTS; MATERIALS; MEASURING METHODS; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS