Published August 2018 | Version v1
Journal article Metadata-only

Enhanced electrical properties of epitaxial PZT films deposited by sol-gel method and crystallized by microwave irradiation

Creators

  • 1. University of Chinese Academy of Sciences, Beijing, 100049 (China)
  • 2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016 (China)
  • 3. School of Material Science and Engineering, Shenyang University of Technology, Shenyang, 110870 (China)

Description

Highlights: • PZT films were well crystallized by microwave irradiation (MI) in a short time. • PZT films crystallized by MI exhibited good ferroelectric properties. • The charge transport mechanism was analyzed using the Schottky emission model. • MI can reduce the depletion layer width at the PZT/Nb-SrTiO3 interface. Lead zirconate titanate Pb(Zr0.2Ti0.8)O3 (PZT) thin films were deposited on Nb-doped SrTiO3 (NSTO) substrates by a sol-gel method and then crystallized by microwave irradiation. The effects of microwave irradiation on the electrical properties of PZT films were investigated in comparison with conventional annealing. The PZT films crystallized by microwave irradiation at 550 °C for only 10 min exhibited better electrical properties than those obtained by conventional heating at 550 °C for 45 min. The theoretical analysis based on the Schottky emission model reveals that microwave irradiation can increase the concentration of oxygen vacancies at the PZT/NSTO interface, thus reducing the effective built-in potential and depletion layer width at the PZT/NSTO interface to make PZT films exhibit better ferroelectric properties.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2018.05.047

Additional details

Identifiers

DOI
10.1016/j.jallcom.2018.05.047;
PII
S0925838818317262;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
757
Journal Page Range
p. 24-30
ISSN
0925-8388
CODEN
JALCEU

INIS

Country of Publication
Switzerland
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53080212
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPARATIVE EVALUATIONS; DEPLETION LAYER; DEPOSITS; DOPED MATERIALS; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; HEATING; IRRADIATION; MICROWAVE RADIATION; OXYGEN; SOL-GEL PROCESS; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; DIELECTRIC MATERIALS; ELECTROMAGNETIC RADIATION; ELEMENTS; EVALUATION; FILMS; LAYERS; MATERIALS; NONMETALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.