Published February 1, 2010 | Version v1
Journal article

Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes

  • 1. Instituto de Ciencias de los Materiales, Universitat de Valencia, POBox 22085, 46071 Valencia (Spain)
  • 2. Instituto de Microelectronica de Madrid (IMM-CNM-CSIC), Isaac Newton 8, E-28760, Tres Cantos Madrid (Spain)

Description

We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/210/1/012028

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
210
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
11. international conference on optics of excitons in confined systems
Acronym
OECS11
Dates
7-11 Sep 2009
Place
Madrid (Spain)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42041236
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COUPLING; DIFFUSION; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MOLECULES; PHOTON EMISSION; QUANTUM DOTS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES