Published February 1, 2010
| Version v1
Journal article
Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
Creators
- 1. Instituto de Ciencias de los Materiales, Universitat de Valencia, POBox 22085, 46071 Valencia (Spain)
- 2. Instituto de Microelectronica de Madrid (IMM-CNM-CSIC), Isaac Newton 8, E-28760, Tres Cantos Madrid (Spain)
Description
We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/210/1/012028Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 210
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 11. international conference on optics of excitons in confined systems
- Acronym
- OECS11
- Dates
- 7-11 Sep 2009
- Place
- Madrid (Spain)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42041236
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COUPLING; DIFFUSION; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MOLECULES; PHOTON EMISSION; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES