Interstice states of transition metal impurities in silicon

Model which enables to determine value of energy barrier of impurity migration of transition metals (Se, Y, La, Zr, Hf, Nb, Ta, Mo, W, Tc, Re, Ru) in silicon is considered. Concepts about interaction potentials of impurity atom with environment atoms with regard to local distortions of crystal lattice, differences in the effect of crystal field on d-orbitals of impurity atom at its occurrence in equilibrium position and in saddle point are the basis of the model. Effect of silicon atom valent electron interaction with d-electron energy barrier is shown