Published September 2009
| Version v1
Miscellaneous
Open
Low temperature formation of platinum silicide for Schottky diodes contact layer
- 1. A.N. Sevchenko scientific-research inst. of applied physics, Minsk (Belarus)
- 2. UF 'Transistor', Minsk (Belarus)
Description
In the given work structural and electrophysical properties of contact layers of platinum silicides formed on silicon wafers by deposition of thin platinum layers and low temperature annealing (100-280 C) were investigated. It is shown, that process of silicide formation in Pt/Si system begins at temperatures of about 160 C. During heat treatment at 160-260 C only Pt2Si phase is revealed. There is no any influence of Si wafer doping on process of silicide formation. Thin layers of silicides, generated at lower temperatures (< 280 C), are more perfect in depth, and also are characterized by more homogeneous grain sizes. (authors)
Files
41006892.pdf
Files
(721.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:6773c840669d6583ba30dd0c7ad440e9
|
721.5 kB | Preview Download |
System files
(14.2 kB)
| Name | Size | Download all |
|---|
Additional details
Additional titles
- Original title (Russian)
- Особенности низкотемпературного формирования силицида платины для контактных слоев силовых диодов шоттки
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-476-728-4
- Imprint Title
- Interaction of radiation with solids. Proceedings of 8. International conference
- Imprint Pagination
- 365 p.
- Journal Page Range
- p. 338-339
- Report number
- INIS-BY--089
Conference
- Title
- 8. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 23-25 Sep 2009
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 41006892
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL STRUCTURE; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; PLATINUM SILICIDES; SCHOTTKY BARRIER DIODES; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; PHYSICAL PROPERTIES; PLATINUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 2 refs., 3 figs. Imprint:Vzaimodejstvie izluchenij s tverdym telom. Materialy 8. Mezhdunarodnoj konferentsii