FTIR and Raman spectra of ion irradiated and annealed 4H-SiC

The 4H-SiC specimens were implanted with 110keV C-ions and then irradiated with 230MeV Pb-ions and subsequently annealed at different temperatures in vacuum. The samples were investigated after each annealing stage by using FTIR and Raman spectroscopy. The obtained FTIR spectra showed several interference fringes in the range from 960 cm-1 to 1450 cm-1. The intensity of fringes decreases with the increase of annealing temperature, and an abrupt decrease of the fringe intensity was found for annealing above 900 degree C, indicating that there was a significant recovery of the irradiation-induced damage in the crystal for annealing at high temperatures. The Raman spectroscopy showed that after annealing at 1200 degree C for 30 min the amorphous layer was recovered and the precipitation of carbon atoms in graphite occurred. (authors)