Published January 2004 | Version v1
Journal article Metadata-only

Contrast differences between scanning ion and scanning electron microscope images

Creators

  • 1. Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan)
  • 2. Department of Applied Chemistry, Graduate School of Engineering, Tokyo Metropolitan University, 1-1 Minami-Ohsawa, Hachioji-shi, Tokyo 192-0364 (Japan)
  • 3. Application and Research Center, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan)

Description

The contrasts of scanning ion microscope images (Ga+ ion) at 30 keV are compared to those of scanning electron microscope images at 30 keV. Remarkable differences are observed in the surface sensitivity, crystal orientation, and atomic number effects of target material. The examples are shown by the secondary electron images and the origins of those differences are discussed on the basis of the different interactions of those particles with solid

Additional details

Identifiers

DOI
10.1116/1.1626646;

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
22
Journal Issue
1
Journal Page Range
p. 49-52
ISSN
0734-2101
CODEN
JVTAD6

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36028163
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ATOMIC NUMBER; CRYSTAL STRUCTURE; GALLIUM IONS; GRAIN ORIENTATION; ION MICROSCOPES; KEV RANGE 10-100; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES
Descriptors DEC
CHARGED PARTICLES; ELECTRON MICROSCOPY; ENERGY RANGE; IONS; KEV RANGE; MICROSCOPES; MICROSCOPY; MICROSTRUCTURE; ORIENTATION

Optional Information

Notes
(c) 2004 American Vacuum Society.