Published 1978
| Version v1
Miscellaneous
Electronic states on the interface in isotype p-p heterojunctions of silicon-rhenium disilicide
- 1. Kievskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Электронные состояния на границе раздела в изотипных п-п-гетеропереходах кремний-дисилицид рения
Publishing Information
- Imprint Title
- 2. All-union conference on physical processes in semiconductor heterostructures, 18-20 October 1978. v. 2
- Journal Page Range
- p. 46-48.
- Report number
- INIS-mf--4787
Conference
- Title
- 2. All-union conference on physical processes in semiconductor heterostructures.
- Dates
- 18 - 20 Oct 1978.
- Place
- Ashkhabad, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 10438884
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ENERGY LEVELS; ENERGY-LEVEL DENSITY; INTERFACES; RHENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICIDES; SILICON; THICKNESS
- Descriptors DEC
- DIMENSIONS; ELEMENTS; SEMIMETALS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 1 ref.; 2 figs.; short note. Imprint:2. Vsesoyuznaya konferentsiya po fizicheskim protsessam v poluprovodnikovykh geterostrukturakh, 18-20 oktyabrya 1978. Tom 2.;Tezisy dokladov.