Published August 8, 2018 | Version v1
Journal article

Electron heating induced by an ac-bias current in the regime of Shubnikov–de Haas oscillation in the high mobility GaAs/AlxGa1−xAs two-dimensional electron system

  • 1. Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)
  • 2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)

Description

The magnetotransport properties of the high mobility GaAs/AlGaAs two-dimensional electron gas systems have been examined to determine the influence of the ac current bias on the carrier temperature. The changes in the line shape of Shubnikov–de Haas oscillations in the longitudinal magnetoresistance () were followed as a function of the ac current bias in the temperature range of in order to determine the carrier heating effect due to the ac bias. The lineshape analysis of these oscillations indicates that the carrier temperature of the two-dimensional electron system is linearly proportional to the ac bias current. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-648X/aace34

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
30
Journal Issue
31
Journal Page Range
[5 p.]
ISSN
0953-8984
CODEN
JCOMEL