Published March 1974
| Version v1
Journal article
Multiplication phenomenon in silicon detectors irradiated with 0.5-1.5 MeV electrons
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1143/jjap.13.567;
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics
- Journal Volume
- 13
- Journal Issue
- 3
- Series
- Jap. J. Appl. Phys.
- Journal Page Range
- 567-568
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 5149411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALPHA SPECTRA; ANNEALING; ELECTRON BEAMS; IRRADIATION; MEV RANGE 01-10; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SI SEMICONDUCTOR DETECTORS; SILICON; SURFACE BARRIER DETECTORS; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; LEPTON BEAMS; MEASURING INSTRUMENTS; MEV RANGE; PARTICLE BEAMS; POINT DEFECTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Letter-to-the-editor.; Updated automatically by Metadata and Full-Text Enrichment Agent