Published 2003
| Version v1
Miscellaneous
Unusual properties of nitrogen containing III-V semiconductors; ab-initio calculations
Creators
- 1. High Pressue Research Center, Polish Academy of Sciences (UNIPRESS), Warsaw (Poland)
- 2. Institute of Physics and Astronomy, University of Aarhus, Aarhus (Denmark)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- indium nitrides
Publishing Information
- Imprint Title
- Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
- Imprint Pagination
- 287 p.
- Journal Page Range
- p. 28-29
Conference
- Title
- European Materials Conference E-MRS 2003 Fall Meeting
- Dates
- 15-19 Sep 2003
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35101015
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM NITRIDES; ARSENIDES; BORON NITRIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY GAP; ENERGY LEVELS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; IMPURITIES; INDIUM COMPOUNDS; INDIUM NITRIDES; NITRIDES; PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; BORON COMPOUNDS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES