Published December 1998 | Version v1
Journal article Metadata-only

A way to improve dose rate laser simulation adequacy

Creators

  • 1. Specialized Electronic Systems, Moscow (Russian Federation)

Description

A method for improving laser simulation of dose rate radiation in silicon IC's (Integrated Circuit) is analyzed based on the application of noncoherent laser radiation. Experimental validation was performed using test structures with up to 90% surface metallization coverage

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
45
Journal Issue
6Pt1
Journal Page Range
p. 2659-2664
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
IEEE nuclear and space radiation effects conference
Dates
20-24 Jul 1998
Place
Newport Beach, CA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30034824
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOSE RATES; INTEGRATED CIRCUITS; IONIZATION; LASER RADIATION; PHYSICAL RADIATION EFFECTS; SIMULATION; TESTING
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; RADIATION EFFECTS; RADIATIONS

Optional Information

Secondary number(s)
CONF-980705--