Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5x1017 to 1.7x1018 cm-3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration