Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter

The high reset current IR in unipolar resistance switching is a major obstacle to practical applications in memory devices. In particular, the first IR value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We find that the compliance current Icomp is a critical parameter for reducing IR values in polycrystalline Pt/NiOw/Pt, Pt/SrTiOx/Pt, Ti/SrTiOx/Pt, Pt/TiOy/Pt and Pt/FeOz/Pt capacitors, which show unipolar resistance switching. We therefore introduce an improved, simple and easy-to-use Icomp limiter that stabilizes the forming process by drastically decreasing the current overflow so as to precisely control the Icomp and subsequent IR values.