Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
- 1. Department of Applied Science and Technology, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 TO Torino (Italy)
- 2. Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG Groningen (Netherlands)
Description
Highlights: • Li ions are intercalated in MoS2 flakes by electrochemical gating above 320 K. • Superconductivity is suppressed in Al2O3-encapsulated LixMoS2 multilayers. • Anomalous "humps" in the temperature dependence of the resistivity appear ∼200 K. • Proposed explanation by the emergence of a high-doping charge-density-wave phase. We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS2. We encapsulate the flake by Al2O3, leaving the device channel exposed at the edges only. A stable Li+ intercalation in the MoS2 lattice is induced by gating the samples with a Li-based polymeric electrolyte above K and the doping state is fixed by quenching the device to K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS2 can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2018.05.232Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2018.05.232;
- PII
- S0169433218315654;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 461
- Journal Page Range
- p. 269-275
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 5. Progress in Applied Surface, Interface and Thin Film Science and Solar Renewable Energy News
- Acronym
- SURFINT-SREN V
- Dates
- 20-23 Nov 2017
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54056064
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM OXIDES; CHARGE DENSITY; CLATHRATES; ELECTROCHEMISTRY; ELECTROLYTES; EQUIPMENT; FIELD EFFECT TRANSISTORS; LITHIUM IONS; MOLYBDENUM SULFIDES; PHASE TRANSFORMATIONS; QUENCHING; SHEETS; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; IONS; MOLYBDENUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SULFIDES; SULFUR COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.