Published February 1999
| Version v1
Journal article
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048-1053 (October 1998)]
Creators
- 1. Department of Physics, University of Nottingham, Notthingham NG7 2RD (United Kingdom)
- 2. Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
- 3. Private Joint-Stock Company 'Semiconductor Devices', 92281 St. Petersburg (Russian Federation)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1134/1.1187675;
- PII
- S1063-7826(99)02701-5;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 33
- Journal Issue
- 2
- Journal Page Range
- p. 222
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051824
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation, No Abstract
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; THEORETICAL DATA; THIN FILMS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 33, 120 (January 1999); (c) 1999 American Institute of Physics