Published October 2000
| Version v1
Journal article
Epitaxial growth and dielectric properties of Bi2VO5.5 thin films on TiN/Si substrates with SrTiO3 buffer layers
- 1. Pukyong National Univ., Pusan (Korea, Republic of)
- 2. Osaka Univ., Osaka (Japan)
Description
Bi2VO5.5 (BVO) thin films were epitaxially grown on SrTiO3/TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high αaxis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8∼4 in the applied frequency range between 102 and 106 Hz
Additional details
Publishing Information
- Journal Title
- Journal of the Korean physical society
- Journal Volume
- 37
- Journal Issue
- 4
- Series
- 8 refs, 4 figs
- Journal Page Range
- p. 478-480
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34087044
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUFFERS; DIELECTRIC PROPERTIES; EPITAXY; MORPHOLOGY; SILICON; STRONTIUM; THIN FILMS; TITANIUM
- Descriptors DEC
- ALKALINE EARTH METALS; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; METALS; PHYSICAL PROPERTIES; SEMIMETALS; TRANSITION ELEMENTS