Electricalparameters of silicon layers implanted by phosphorus fluoride ions

Specific surface resistance of silicon layers doped by PF+ and PF2+ ions with the energy of 65 and 89 keV respectively in the dose range of 1013-1016 cm-2. It is ascertained that during phosphorus fluoride ion implantation amorphous-rendered surface layer is formed. In the process of annealing in the range of 600-700 deg C a high degree of phosphorus atoms electrical activity is attained. During annealing in the range of 600-800 deg C the activation of impurity beyond the amorphous-rendered region and, accordingly, further decrease of specific surface resistance take place. It is pointed out that fluorine implantation in the composition of molecular ions suppresses fast interstitial component of phosphorus diffusion and makes sharper the distribution profile of phosphorus active atoms