Published October 1997 | Version v1
Journal article

Polarization dependence of phonon and electronic Raman intensities in PrVO4 and NdVO4

  • 1. Department of Physics, University of California, Berkeley, California 94720 (United States)
  • 2. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  • 3. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Description

The polarization behavior of the phonon and electronic Raman intensities in PrVO4 and NdVO4 has been measured. These experimental intensities are compared with the intensities predicted by a polarization-dependent intensity theory. Good agreement was found between theory and experiment. The fitted values of the ratio F1/F2 for PrVO4 and NdVO4 were found to be 1.0 and 0.48, respectively. The relative values of the αqt parameters obtained from the fit were compared with theoretical values which were derived using both second- and third-order theory, where the latter included the spin-orbit interaction. Axe close-quote s second-order theory was found to adequately explain the relative intensities of electronic Raman transitions in PrVO4 and NdVO4. copyright 1997 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
56
Journal Issue
13
Journal Page Range
p. 7974-7987
ISSN
0163-1829
CODEN
PRBMDO