Published April 1, 2009
| Version v1
Journal article
Nanoindentation-induced phase transformations in silicon at elevated temperatures
Creators
- 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, 0200 (Australia)
- 2. National Institute for Nanotechnology, 11421 Saskatchewan Drive, Edmonton, AB, T6G 2M9 (Canada)
- 3. Department of Chemistry, University of Western Ontario, London, ON, N6A 3K7 (Canada)
Description
The nanoindentation-induced phase transformation behavior of silicon at elevated temperatures (25-150 deg. C) has been studied. Nucleation of Si-III/Si-XII on unloading is enhanced with increasing temperature and at the highest temperatures in an amorphous Si matrix, occurs in a continuous fashion without a pop-out event. Interestingly, for slow unloading at the highest temperatures, formation of Si-III/Si-XII in a crystalline Si matrix was not observed. Elevated temperatures enhance the nucleation of Si-III and Si-XII during unloading but the final composition of the phase transformed zone is also dependent on the thermal stability of the phases in their respective matrices.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/20/13/135603Additional details
Identifiers
- DOI
- 10.1088/0957-4484/20/13/135603;
- PII
- S0957-4484(09)00820-4;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 20
- Journal Issue
- 13
- Journal Page Range
- [5 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41012510
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- NANOSTRUCTURES; PHASE TRANSFORMATIONS; SILICON; STABILITY; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ELEMENTS; SEMIMETALS; TEMPERATURE RANGE