Published April 1, 2009 | Version v1
Journal article

Nanoindentation-induced phase transformations in silicon at elevated temperatures

  • 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, 0200 (Australia)
  • 2. National Institute for Nanotechnology, 11421 Saskatchewan Drive, Edmonton, AB, T6G 2M9 (Canada)
  • 3. Department of Chemistry, University of Western Ontario, London, ON, N6A 3K7 (Canada)

Description

The nanoindentation-induced phase transformation behavior of silicon at elevated temperatures (25-150 deg. C) has been studied. Nucleation of Si-III/Si-XII on unloading is enhanced with increasing temperature and at the highest temperatures in an amorphous Si matrix, occurs in a continuous fashion without a pop-out event. Interestingly, for slow unloading at the highest temperatures, formation of Si-III/Si-XII in a crystalline Si matrix was not observed. Elevated temperatures enhance the nucleation of Si-III and Si-XII during unloading but the final composition of the phase transformed zone is also dependent on the thermal stability of the phases in their respective matrices.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/13/135603

Additional details

Identifiers

DOI
10.1088/0957-4484/20/13/135603;
PII
S0957-4484(09)00820-4;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
13
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41012510
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
NANOSTRUCTURES; PHASE TRANSFORMATIONS; SILICON; STABILITY; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
ELEMENTS; SEMIMETALS; TEMPERATURE RANGE