Published December 1989
| Version v1
Journal article
Low-temperature microhomogenization of cadmium telluride crystals
Description
Results of studying cadmium telluride samples doped with Tl impurity at 900 deg C, and n-CdTex samples after low-temperature Ag doping are presented. It is shown that low-temperature Al doping provides local concentration constancy of Cdi and Agi compensating donors. As s result smoothing of charge pattern and material microgenization take place
Additional details
Additional titles
- Original title (Russian)
- Низкотемпературная микрогомогенизация кристаллов теллурида кадмия
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 32
- Journal Issue
- 12
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 95-97
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 22029972
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM TELLURIDES; CARRIER DENSITY; FABRICATION; HOLE MOBILITY; INTERSTITIALS; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; SILVER ADDITIONS; TEMPERATURE DEPENDENCE; THALLIUM ADDITIONS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; POINT DEFECTS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS