Published August 5, 2002 | Version v1
Journal article Metadata-only

Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

Creators

  • 1. Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701 (Korea, Republic of)
  • 2. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)

Description

Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode

Additional details

Identifiers

DOI
10.1063/1.1477280;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
6
Journal Page Range
p. 993-995
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35032327
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CADMIUM TELLURIDES; EMISSION SPECTRA; EXPERIMENTAL DATA; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC TELLURIDES
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; EMISSION; EPITAXY; FILMS; INFORMATION; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; NUMERICAL DATA; PHOTON EMISSION; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
(c) 2002 American Institute of Physics.