Electrical transport and optical properties of Cd3As2 thin films
- 1. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)
- 2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
Cd3As2, as a three-dimensional (3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/ab3a91Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 28
- Journal Issue
- 10
- Journal Page Range
- [8 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52033346
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CADMIUM ARSENIDES; CARRIER MOBILITY; CHIRALITY; DISPERSIONS; DOPED MATERIALS; GRAPHENE; HETEROJUNCTIONS; MONOCRYSTALS; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; SEMIMETALS; THIN FILMS; THREE-DIMENSIONAL LATTICES; ZINC ADDITIONS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CARBON; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; FILMS; HEAT TREATMENTS; MATERIALS; MOBILITY; NONMETALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; ZINC ALLOYS