Semiconductor microstructures based on delta doping

The method of delta doping, which confines donor or acceptor impurities to an atomic plane perpendicular to the crystal growth direction, has recently become very important for fundamental studies as well as for application of artificially layered semiconductor microstructures. In this work, some of our results obtained using the Thomas-Fermi approach in single Si delta-doped GaAs, periodically Si delta-doped GaAs and sawtooth superlattices are discussed in terms of their potential applications of this kind of structures in optoelectronic devices. (Author) 13 refs