Evaluation of the localized residual strain states of GaN layers by using a TEM-CBED method

The convergent beam electron diffraction (CBED) method of transmission electron microscopy (TEM) is well known to be a useful technique for evaluating the localized residual strain by measuring the quantitative variations of the lattice parameters. The multi quantum wells (MQWs) affect on the localized residual strain in a GaN layer, where the AlGaN layer is deposited in order to reduce the strain. We used TEM in order to determine the variations of the lattice parameters of the GaN layer both with and without the AlGaN layer. The lattice parameters of the GaN layer were measured every 100 nm along to the transverse direction below the MQWs. The lattice parameters of the lower part of the GaN layer were shown to have lower values than those of the higher part (below MQWs), which is caused by the compressive stress formed by the sapphire substrate. Also, due to the tensile stress formed by an InGaN in the MQWs, the lattice parameters of the higher part were shown to have higher values. The AlGaN layer deposited on the MQWs produced a compressive stress on the GaN layer so that the average lattice parameters of the GaN layer with the AlGaN layer were lower than those without the AlGaN layer. Therefore, we conclude that the AlGaN layer plays a role in reducing the localized residual strain on the GaN layer below the MQWs.